An analytical model for the threshold voltage of short-channel double-material-gate (DMG) MOSFETs with a strained-silicon (s-Si) channel on silicon-germanium …
S Bhushan - 2013 - ethesis.nitrkl.ac.in
As the silicon CMOS technology move into the sub-20nm regime, manufacturing limits and
fundamental curb the traditional scaling of transistors. Modernization in device structures …
fundamental curb the traditional scaling of transistors. Modernization in device structures …