Non-Hermitian topological magnonics
Dissipation in mechanics, optics, acoustics, and electronic circuits is nowadays recognized
to be not always detrimental but can be exploited to achieve non-Hermitian topological …
to be not always detrimental but can be exploited to achieve non-Hermitian topological …
An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime
LA Samoska - IEEE Transactions on Terahertz Science and …, 2011 - ieeexplore.ieee.org
We present an overview of solid-state integrated circuit amplifiers approaching terahertz
frequencies based on the latest device technologies which have emerged in the past …
frequencies based on the latest device technologies which have emerged in the past …
A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology
A fully-integrated FMCW radar system for automotive applications operating at 77 GHz has
been proposed. Utilizing a fractional-synthesizer as the FMCW generator, the transmitter …
been proposed. Utilizing a fractional-synthesizer as the FMCW generator, the transmitter …
Design and analysis of a 60-GHz CMOS Doppler micro-radar system-in-package for vital-sign and vibration detection
TYJ Kao, Y Yan, TM Shen… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This paper presents the first flip-chip-packaged and fully integrated Doppler micro-radar in
90-nm CMOS for noncontact vital-sign and vibration detection. The use of a smaller …
90-nm CMOS for noncontact vital-sign and vibration detection. The use of a smaller …
A passive W-band imaging receiver in 65-nm bulk CMOS
A Tomkins, P Garcia… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
A passive imaging receiver operating in the W-band around 90 GHz has been realized in a
digital 65-nm CMOS process. The circuit, occupying only 0.41 mm 2, integrates an SPDT …
digital 65-nm CMOS process. The circuit, occupying only 0.41 mm 2, integrates an SPDT …
Two-Way Current-Combining -Band Power Amplifier in 65-nm CMOS
This paper presents a two-way current-combining-based W-band power amplifier (PA) in 65-
nm CMOS technology. An analytical model and design method for W-band power combiners …
nm CMOS technology. An analytical model and design method for W-band power combiners …
-Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS
B Cetinoneri, YA Atesal, A Fung… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
This paper presents low-noise-band amplifiers and milliwatt-level 170-200-GHz output
doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are …
doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are …
A SiGe BiCMOS transmitter/receiver chipset with on-chip SIW antennas for terahertz applications
S Hu, YZ Xiong, B Zhang, L Wang… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
This paper presents a terahertz (THz) transmitter (Tx) and receiver (Rx) chipset operating
around 400 GHz in 0.13-μm SiGe BiCMOS technology. The Tx chip consists of a voltage …
around 400 GHz in 0.13-μm SiGe BiCMOS technology. The Tx chip consists of a voltage …
D-band channel measurements and characterization for indoor applications
This paper presents measurements and characterization of D-band indoor channels. The
measurements are performed in line-of-sight (LoS), obstructed-LoS (OLoS), and reflected …
measurements are performed in line-of-sight (LoS), obstructed-LoS (OLoS), and reflected …
An ultra-wideband IF millimeter-wave receiver with a 20 GHz channel bandwidth using gain-equalized transformers
V Bhagavatula, T Zhang, AR Suvarna… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
This paper presents a CMOS millimeter-wave (mm-wave) receiver designed to meet the
challenges in low-power, ultra-broadband, phased-array systems with a large number of …
challenges in low-power, ultra-broadband, phased-array systems with a large number of …