[HTML][HTML] First-Principle Calculations of Interfacial Resistance between Nickel Silicide and Hyperdoped Silicon with N-Type Dopants Arsenic, Phosphorus, Antimony …
C Lim, S Park, J Chang - Applied Surface Science Advances, 2024 - Elsevier
The interfacial resistance between NiSi 2 and n-type doped Si was investigated using
density functional theory calculations with hybrid functionals. We explored the resistance of …
density functional theory calculations with hybrid functionals. We explored the resistance of …
Phase equilibria of the Fe–Ni–Si system at 850 C
By means of X-ray diffraction, metallography, scanning electron microscopy with energy
dispersive X-ray analysis, and electron probe microanalysis, the constitution of the ternary …
dispersive X-ray analysis, and electron probe microanalysis, the constitution of the ternary …
Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?
EA Kouadri-Boudjelthia, E Ntsoenzok, R Benoit… - Nuclear Instruments and …, 2016 - Elsevier
A low-cost purification technique was evaluated on multicrystalline silicon (mc-Si). It consists
of an efficient impurity trapping process involving nanocavities created by plasma immersion …
of an efficient impurity trapping process involving nanocavities created by plasma immersion …
TEM analysis of (Ni,Fe)Si2 precipitates in Si
S Langkau, G Wagner, G Kloess… - physica status solidi …, 2010 - Wiley Online Library
The present article provides evidence that Fe impurity atoms in silicon can be gathered by
NiSi2 precipitates at temperatures near RT via solid‐state diffusion. Mixtures of silicon and …
NiSi2 precipitates at temperatures near RT via solid‐state diffusion. Mixtures of silicon and …
Effects of argon ion bombardment on the structure and magnetic properties of ultrathin Fe films
S Ramaswamy, C Gopalakrishnan… - Journal of Vacuum …, 2010 - pubs.aip.org
Modifications of structural, compositional, and magnetic properties of ultrathin Fe/Si bilayer
films induced by Ar+ ion bombardment have been studied. The films were grown at room …
films induced by Ar+ ion bombardment have been studied. The films were grown at room …
[PDF][PDF] The silicon-rich corner of the system Si–Cu–Co
S Langkau, R Schlegel, T Schmutzler, C Stephan… - Energy …, 2011 - cyberleninka.org
Phase equilibria and miscibility in the silicon-rich corner of the system Si–Cu–Co were
analyzed in the present work. Powder mixtures of Cu, Co and Si at 1400 C were molten and …
analyzed in the present work. Powder mixtures of Cu, Co and Si at 1400 C were molten and …
Transmission electron microscopy investigations of metal-impurity-related defects in crystalline silicon
M Seibt, P Saring, P Hahne, L Stolze… - Solid State …, 2011 - Trans Tech Publ
This contribution summarizes recent efforts to apply transmission electron microscopy (TEM)
techniques to recombination-active extended defects present in a low density. In order to …
techniques to recombination-active extended defects present in a low density. In order to …
Incorporation of Fe into NiSi2 precipitates
S Langkau, G Wagner, MI Bertoni, T Buonassisi… - Energy Procedia, 2011 - Elsevier
The present paper provides evidence that Fe can be incorporated into NiSi2 precipitates by
solid-state diffusion. Furthermore, analysis of Si crystals contaminated with Ni and Fe at …
solid-state diffusion. Furthermore, analysis of Si crystals contaminated with Ni and Fe at …