In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …

Abstract Magnesium Oxide (MgO) thin film structures were deposited on glass and n-Si
substrates by means of RF magnetron sputtering technique. Structural, morphological …

In this study, frequency-dependent physical parameters, voltage-dependent of surface
traps/states, and their lifetime of the Au/(ZnCdS-GO: PVP)/n-Si (MPS) type structures were …

In this study, to determine the impacts of PVC and (PVC: Ti) interlayer on the basic electrical
parameters and conduction mechanisms, Au/n-Si (MS), Au/PVC/n-Si (MPS1), and Au/(PVC …

A nickel oxide (NiO)/silver (Ag)/NiO (NAN) transparent conducting electrode (TCE) was
deposited on NiO and zinc oxide (ZnO) to fabricate Schottky diodes (SDs). The physical and …

In this study, AgNWs/GO nanocomposites were prepared by mechanically mixing graphene
oxide (GO) synthesized using a modified Hummers' method and silver nanowires (AgNWs) …

This study describes the synthesis of barium (Ba) and strontium (Sr) thin films using jet
neublizer spray pyrolysis (JNSP) technology, which facilitates the fabrication of junction …

This paper explores the effects of the organic interfacial layer on the electrophysical
characteristics of Schottky barrier diodes (SBDs). Three types of SBDs were fabricated: Au …

Abstract Bismuth oxide (Bi 2 O 3) insulator layer was used to prepare a Ni/Cr/Bi 2 O 3/n-GaN
Metal-insulator-semiconductor (MIS)-type junction. X-ray diffraction (XRD), scanning …

A defect induced space charge limited conduction mechanism in PVP capped CdS, CdS: Mn
and CdS/ZnS nanostructured films has been discussed in this research paper. XRD confirms …