Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their
immense potential for scientific breakthroughs and technological innovations. While some …
immense potential for scientific breakthroughs and technological innovations. While some …
Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
We present a comprehensive study of Positive Bias Temperature Instability (PBTI) in In 0.53
Ga 0.47 As devices with Al 2 O 3 gate oxide, and with varying thickness of the channel …
Ga 0.47 As devices with Al 2 O 3 gate oxide, and with varying thickness of the channel …
Impact of intrinsic channel scaling on InGaAs quantum-well MOSFETs
J Lin, DA Antoniadis… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Using a novel gate-last process scheme that affords precise channel thickness control, we
have fabricated self-aligned InGaAs quantum-well (QW) MOSFETs. Devices with a channel …
have fabricated self-aligned InGaAs quantum-well (QW) MOSFETs. Devices with a channel …
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The
average instability is found to be comparable to planar structures, but significantly larger …
average instability is found to be comparable to planar structures, but significantly larger …
Insight on the characterization of MoS2 based devices and requirements for logic device integration
MoS 2 based transistors are being explored as a promising candidate for different
applications. The techniques employed to characterize these devices have been directly …
applications. The techniques employed to characterize these devices have been directly …
An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
Continuing CMOS performance scaling requires developing MOSFETs of high-mobility
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, , and sSi n-MOSFETs
D Lizzit, D Esseni, P Palestri… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
Thanks to the high electron velocities, III-V semiconductors have the potential to meet the
challenging ITRS requirements for high performance for sub-22-nm technology nodes and …
challenging ITRS requirements for high performance for sub-22-nm technology nodes and …
Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications
SK Radhakrishnan, B Subramaniyan… - … -International Journal of …, 2018 - Elsevier
This work analyses the impact of channel material, channel thickness (T CH) and gate
length (L g) on the various performance device metrics of Double-gate (DG) High Electron …
length (L g) on the various performance device metrics of Double-gate (DG) High Electron …
Highly in-plane anisotropies of mechanical properties and extraordinary sunlight absorption in layered wide bandgap semiconductors: Bi2XO5 (X= Se, Te)
Q Zhao, Y Ren, C He, Z Xue, J Wang, Y Ji… - Optics & Laser …, 2025 - Elsevier
The properties of pronounced in-plane anisotropy on flexibility provide more versatility for
applying two-dimensional materials in optoelectronics, creating opportunities for the …
applying two-dimensional materials in optoelectronics, creating opportunities for the …
A New Physical Method Based on – Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- /III-V MOSFETs
We propose a new defect characterization technique for high-k dielectric stacks in III-V
MOSFETs. This technique allows extracting the defect density from the simulations of the CV …
MOSFETs. This technique allows extracting the defect density from the simulations of the CV …