Dilute ferromagnetic semiconductors: Physics and spintronic structures
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
Theory of ferromagnetic (III, Mn) V semiconductors
T Jungwirth, J Sinova, J Mašek, J Kučera… - Reviews of Modern …, 2006 - APS
The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …
Magnetization vector manipulation by electric fields
Conventional semiconductor devices use electric fields to control conductivity, a scalar
quantity, for information processing. In magnetic materials, the direction of magnetization, a …
quantity, for information processing. In magnetic materials, the direction of magnetization, a …
Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature
P Li, A Chen, D Li, Y Zhao, S Zhang, L Yang, Y Liu… - Advanced …, 2014 - infona.pl
Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is
considered as the milestone of ultralow power spintronic devices. Here, reversible …
considered as the milestone of ultralow power spintronic devices. Here, reversible …
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …
Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
[图书][B] Nanomagnetism and spintronics
T Shinjo - 2013 - books.google.com
The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition,
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …
Ferromagnetic resonance in Ga1− xMnxAs dilute magnetic semiconductors
X Liu, JK Furdyna - Journal of Physics: Condensed Matter, 2006 - iopscience.iop.org
We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films
We demonstrate reproducible voltage induced non-volatile switching of the magnetization in
an epitaxial thin Fe 81 Ga 19 film. Switching is induced at room temperature and without the …
an epitaxial thin Fe 81 Ga 19 film. Switching is induced at room temperature and without the …
Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures
AW Rushforth, E De Ranieri, J Zemen… - Physical Review B …, 2008 - APS
We demonstrate voltage control of the magnetic anisotropy of a (Ga, Mn) As device bonded
to a piezoelectric transducer. The application of a uniaxial strain leads to a large …
to a piezoelectric transducer. The application of a uniaxial strain leads to a large …