CuO nanowires have been synthesized by thermal oxidation of copper foils in oxygen
atmosphere. Morphology and microstructure of the nanowires was studied as a function of …

This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …

Colloidal cupric oxide (CuO) nanoparticles were formed by using a colloid-thermal synthesis
process. X-ray diffraction patterns, transmission electron microscopy (TEM) images, high …

Two light-emitting diode samples are grown with InGaN and GaN underlying layers beneath
the multiple quantum wells (MQWs), respectively. By measuring the carrier lifetime as a …

A combination of atomic force microscopy (AFM), conductive AFM (C-AFM) and scanning
Kelvin probe microscopy (SKPM) was used to investigate the correlation between the …

We report on the electrical characteristics of InGaN/GaN multiple-quantum-well light-emitting
diodes (LEDs) grown on sapphire and free-standing GaN substrates. As a result of defect …

InGaN-based blue and green light-emitting diodes are studied by temperature-dependent
electroluminescence (EL) from 300 to 50 K to elucidate the effects of carrier overflow and the …

A distribution function for localized carriers, f (E, T)= 1/(e (E− E a)/k B T+ τ tr/τ r), is obtained
by solving a rate equation, in which electrical carriers' generation, thermal escape, recapture …

We investigate the current-dependent and temperature-dependent efficiency droops (" J-
droop" and" T-droop", respectively) in InGaN-based blue and AlGaInP-based red light …