Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …

Trapping is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …

Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor
(HEMT) device is presented. Drain-current dispersion effects are investigated when gate or …

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-
electron mobility transistors (HEMTs) is proposed. The technique is based on electrical …

We have developed a new methodology to investigate the dynamic ON-resistance (R ON) of
high-voltage GaN field-effect transistors. The new technique allows the study of R ON …