The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

Aggressive scaling of the thickness of the gate insulator in CMOS transistors has caused the
quality and reliability of ultrathin dielectrics to assume greater importance. This paper …

We report on growth and characterization of both epitaxial and amorphous films Gd 2 O 3 of
(ε= 14) and Y 2 O 3 (ε= 18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor …

We present the materials growth and properties of both epitaxial and amorphous films of Gd
2 O 3 (κ= 14) and Y 2 O 3 (κ= 18) as the alternative gate dielectrics for Si. The rare earth …

High-k metal oxide gate dielectrics may be required to extend Moore's law of semiconductor
device density scaling into the future. However, growth of a thin SiO 2-containing interface …

Within just a decade from the pioneering work demonstrating the utility of nanopores for
molecular sensing, nanopores have emerged as versatile systems for single-molecule …

An interface dipole model explaining threshold voltage (V t) tuning in HfSiON gated n-
channel field effect transistors (n FETs) is proposed. V t tuning depends on rare earth (RE) …

There is no field of enterprise today more dynamic or more challenging than Digital
Integrated Circuits. But because of its rapid development, the field has quickly outgrown …

This paper presents a comprehensive, numerical model for the remote Coulomb scattering
(RCS) in ultrathin gate oxide MOSFETs due to ionized impurities in the polysilicon. Using a …

Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick
silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 …