Gallium nitride (GaN) has attracted much attention due to its outstanding characteristics. It
may replace conventional semiconductor materials, such as silicon, that are approaching …

This paper reports the synthesis, characterizations and applications of well-crystalline 2D-
cerium oxide (CeO 2) nanoflakes prepared by a rapid and facile solution combustion …

Sputtering-derived HfO 2 high-k gate dielectric thin films have been deposited on Si
substrate by means of high vacuum physics vapor deposition method. Via characterization …

In this review, an introduction to nanostructured films focusing on cerium oxide (CeO2) as
high dielectric constant (k) material for silicon-based metal-oxide-semiconductor devices …

The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films
deposited on Si substrate and quartz substrate by RF magnetron sputtering have been …

In this article, we report the preparation of Al-doped ZrO2 (AZO) thin films by the sol–gel
method. The electrical properties, microstructure, and optical properties of AZO high-k gate …

Solution-processed high-k gate dielectrics for metal-oxide-semiconductor (MOS) capacitor
have been widely investigated with the objective of achieving high performance field effect …

In the present study, facile electrochemical sensor built on carbon paste electrode modified
with as synthesized CeO 2 nanoparticles (Cerium Oxide Modified Carbon Paste Electrode …

Effects of different post-deposition annealing (PDA) ambient [O2, N2O, N2, forming gas
(95% N2-5% H2), and Ar] on the physical and metal–oxide–semiconductor (MOS) …

Cerium oxide (CeO 2) thin films were deposited on Pt (111)/Ti/SiO 2/Si (100) substrates
using pulsed laser deposition method at different temperatures such as, 300 K, 573 K and …