Graphene nanoribbon field effect transistors analysis and applications
The dimension down scaling capability of the silicon based transistors has produced
significant developments in the electronic industry. The channel length reduction has been …
significant developments in the electronic industry. The channel length reduction has been …
Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric
In nanoscale transistors, electron tunneling increases and causes a large leakage current
due to the reduced channel length and gate oxide thickness. To reduce the short-channel …
due to the reduced channel length and gate oxide thickness. To reduce the short-channel …
Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application
R Rathinam, A Pon, S Carmel… - IET Circuits, Devices & …, 2020 - Wiley Online Library
In this work, the authors study the performance of black phosphorus double gate MOSFET
(BP‐DGMOSFET) within the ballistic limit. A hybrid simulation technique involving both …
(BP‐DGMOSFET) within the ballistic limit. A hybrid simulation technique involving both …