[HTML][HTML] Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET

A Salah, M El Banna, A Shaker, M Ossaimee - Alexandria Engineering …, 2023 - Elsevier
CNTFET device structures are gaining more research interest as conventional FET
structures are reaching their scaling limits. One of the most crucial effects that could occur in …

Low-power and robust ternary SRAM cell with improved noise margin in CNTFET technology

S ul Haq, E Abbasian, T Khurshid, VK Sharma - Physica Scripta, 2024 - iopscience.iop.org
In this paper, a carbon nanotube field-effect transistor (CNTFET) based low power and
robust ternary SRAM (TSRAM) cell with enhanced static noise margin (SNM) has been …

[HTML][HTML] Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering

M Ossaimee, A Salah, SH Gamal, A Shaker… - Ain Shams Engineering …, 2023 - Elsevier
In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has
been designed and simulated using a work function engineering technique. An intrinsic CNT …