The role of magnetoelastic and magnetostrictive energies in the magnetization process of MnAs/GaAs epilayers
In this work we present a detailed study of the anisotropic magnetic behavior of MnAs
epilayers grown by molecular beam epitaxy on GaAs (001) and GaAs (111) B substrates. An …
epilayers grown by molecular beam epitaxy on GaAs (001) and GaAs (111) B substrates. An …
Selective‐area growth and magnetic reversals of ferromagnetic nanoclusters on semiconducting substrate for magnetic logic applications
S Hara, K Komagata - physica status solidi (b), 2015 - Wiley Online Library
The use of selective‐area metal‐organic vapor phase epitaxy, which is our bottom‐up
formation approach, to fabricate MnAs nanocluster composite arrays in which two …
formation approach, to fabricate MnAs nanocluster composite arrays in which two …
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing
incidence X-ray diffractions are used to study the influence of different strain states of …
incidence X-ray diffractions are used to study the influence of different strain states of …
Synthesis and characterization of MnAs and MnP nanoclusters embedded in III–V semiconductors
M Khalid, S Prucnal, MO Liedke, K Gao… - Materials Research …, 2014 - iopscience.iop.org
We report on a systematic study of the synthesis and magnetism of hybrid ferromagnetic
semiconductors comprised of MnAs and MnP nanoclusters embedded in GaAs and InP …
semiconductors comprised of MnAs and MnP nanoclusters embedded in GaAs and InP …
Low energy Ne ion beam induced-modifications of magnetic properties in MnAs thin films
M Trassinelli, LB Carlsson, S Cervera… - Journal of Physics …, 2016 - iopscience.iop.org
Investigations of the complex behavior of the magnetization of manganese arsenide thin
films due to defects induced by irradiation of slow heavy ions are presented. In addition to …
films due to defects induced by irradiation of slow heavy ions are presented. In addition to …
In depth spatially inhomogeneous phase transition in epitaxial MnAs film on GaAs (001)
C Gatel, X Fu, V Serin, M Eddrief, V Etgens… - Nano Letters, 2017 - ACS Publications
Most studies on MnAs material in its bulk form have been focused on its temperature-
dependent structural phase transition accompanied by a magnetic one. Magnetostructural …
dependent structural phase transition accompanied by a magnetic one. Magnetostructural …
Electronic properties of embedded MnAs nano-clusters in a GaAs matrix and (Ga, Mn) As films: Evidence of distinct metallic character
We investigated the electronic properties of MnAs nano-clusters embedded in GaAs by bulk
sensitive photoemission spectroscopy and cross-sectional scanning tunneling microscopy …
sensitive photoemission spectroscopy and cross-sectional scanning tunneling microscopy …
[HTML][HTML] Dimension effect on the in-depth phase transition of MnAs/GaAs (001): From a thin film to a nanorod
X Fu, W Ye, N Zhou - AIP Advances, 2018 - pubs.aip.org
We explore the dimension effect on the in-depth phase transition behavior of MnAs thin films
on GaAs substrate by investigating the in-depth strain distribution with experiments and …
on GaAs substrate by investigating the in-depth strain distribution with experiments and …
[PDF][PDF] Structure and dynamics of highly charged ions and pionic atoms
M Trassinelli - 2017 - theses.hal.science
In this manuscript I present some of my research activities conducted during the past ten
years starting from my hiring as researcher at the Centre National de la Recherche …
years starting from my hiring as researcher at the Centre National de la Recherche …