Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …

We use first-principles electronic structure calculations to predict a new class of two-
dimensional (2D) topological insulators (TIs) in binary compositions of group III elements (B …

A large gap two-dimensional (2D) topological insulator (TI), also known as a quantum spin
Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing …

Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …

Surface energy and work function of 12 III-V semiconductors, AlP, AlAs, AlSb, AlBi, GaP,
GaAs, GaSb, GaBi, InP, InAs, InSb, and InBi, on (110) surfaces are calculated using ab initio …

The previous systems of molecular single-, double-, and triple-bond self-consistent, additive
covalent radii R (AB)= r (A)+ r (B) are now completed with a fit for crystals, where both atoms …

Using an sp 3 s* tight-binding (TB) model we demonstrate how the observed strong bowing
of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide …

The physical properties of Boron–group V compounds have been investigated
systematically by using density functional theory, based on the full-potential linearized …