Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides
In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
Prediction of large-gap two-dimensional topological insulators consisting of bilayers of group III elements with Bi
We use first-principles electronic structure calculations to predict a new class of two-
dimensional (2D) topological insulators (TIs) in binary compositions of group III elements (B …
dimensional (2D) topological insulators (TIs) in binary compositions of group III elements (B …
Robust large gap two-dimensional topological insulators in hydrogenated III–V buckled honeycombs
CP Crisostomo, LZ Yao, ZQ Huang, CH Hsu… - Nano …, 2015 - ACS Publications
A large gap two-dimensional (2D) topological insulator (TI), also known as a quantum spin
Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing …
Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing …
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
MP Polak, P Scharoch… - … Science and Technology, 2015 - iopscience.iop.org
Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
First-principles study of the surface energy and work function of III-V semiconductor compounds
Surface energy and work function of 12 III-V semiconductors, AlP, AlAs, AlSb, AlBi, GaP,
GaAs, GaSb, GaBi, InP, InAs, InSb, and InBi, on (110) surfaces are calculated using ab initio …
GaAs, GaSb, GaBi, InP, InAs, InSb, and InBi, on (110) surfaces are calculated using ab initio …
Refitted tetrahedral covalent radii for solids
P Pyykkö - Physical Review B—Condensed Matter and Materials …, 2012 - APS
The previous systems of molecular single-, double-, and triple-bond self-consistent, additive
covalent radii R (AB)= r (A)+ r (B) are now completed with a fit for crystals, where both atoms …
covalent radii R (AB)= r (A)+ r (B) are now completed with a fit for crystals, where both atoms …
Derivation of 12-and 14-band k· p Hamiltonians for dilute bismide and bismide-nitride semiconductors
CA Broderick, M Usman… - … science and technology, 2013 - iopscience.iop.org
Using an sp 3 s* tight-binding (TB) model we demonstrate how the observed strong bowing
of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide …
of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide …
The first-principles study on physical properties and phase stability of Boron-V (BN, BP, BAs, BSb and BBi) compounds
M Ustundag, M Aslan, BG Yalcin - Computational Materials Science, 2014 - Elsevier
The physical properties of Boron–group V compounds have been investigated
systematically by using density functional theory, based on the full-potential linearized …
systematically by using density functional theory, based on the full-potential linearized …