Domain wall memory: Physics, materials, and devices

D Kumar, T Jin, R Sbiaa, M Kläui, S Bedanta, S Fukami… - Physics Reports, 2022 - Elsevier
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …

[HTML][HTML] Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

D Wang, R Tang, H Lin, L Liu, N Xu, Y Sun… - Nature …, 2023 - nature.com
Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall
and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation …

Synergy of Spin‐Orbit Torque and Built‐In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons

D Wang, Z Wang, N Xu, L Liu, H Lin, X Zhao… - Advanced …, 2022 - Wiley Online Library
Owing to programmable nonlinear dynamics, magnetic domain wall (DW)‐based devices
can be configured to function as spintronic neurons, promising to execute sophisticated …

Domain wall motion across magnetic and spin compensation points in magnetic garnets

MV Logunov, SS Safonov, AS Fedorov, AA Danilova… - Physical Review …, 2021 - APS
Ferrimagnetic materials represent unique systems where the ease of manipulating the spins
with applied magnetic fields is combined with exchange-driven acceleration of the internal …

Progress in Spin Logic Devices Based on Domain-Wall Motion

BB Vermeulen, B Sorée, S Couet, K Temst, VD Nguyen - Micromachines, 2024 - mdpi.com
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility,
low switching energy, and collective behavior of magnetization. These properties allow the …

Deterministic field-free switching of a perpendicularly magnetized ferromagnetic layer via the joint effects of the Dzyaloshinskii–Moriya interaction and damping-and …

K Wu, D Su, R Saha, JP Wang - Journal of Physics D: Applied …, 2020 - iopscience.iop.org
Field-free switching of a perpendicularly magnetized ferromagnetic layer by spin–orbit
torque (SOT) from the spin Hall effect is of great interest in the applications of magnetic …

Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices

MA Azam, D Bhattacharya, D Querlioz, CA Ross… - …, 2020 - iopscience.iop.org
An energy-efficient voltage-controlled domain wall (DW) device for implementing an artificial
neuron and synapse is analyzed using micromagnetic modeling in the presence of room …

Compact model of Dzyaloshinskii domain wall motion-based MTJ for spin neural networks

C Wang, Z Wang, M Wang, X Zhang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Recent progress has demonstrated that current-induced domain wall motion (CIDWM) is
able to achieve efficient and ultrafast magnetic switching in the case of spin-orbit torque …

Direct detection of spin-orbit effective fields through magneto-optical Kerr effect

T Xing, C Zhou, CX Wang, Z Li, AN Cao, WL Cai… - Physical Review B, 2020 - APS
Current-induced effective magnetic fields provide efficient methods to electrically control the
magnetization switching in ultrathin magnetic films. It is getting clearer that the two terms of …

Tuning surface spin polarization of CoFeB by boron diffusion detected by spin resolved photoemission

Q Liu, X Lu, C Fu, J Chen, Z Zhang, Y Gong… - Chinese Physics …, 2023 - iopscience.iop.org
Research of spin polarization of magnetic CoFeB thin films is of practical importance in
spintronic applications. Here, using a direct characterization technique of spin-resolved …