Abstract The perovskite La2/3Sr1/3MnO3 (LSMO)-based heterostructures have attracted
considerable interest for their potential applications in oxide spintronics, topological …

The magnetic moment and the magnetic order induced by localized defects, like vacancies,
interstitials, and/or nonmagnetic (NM) ions, in a NM oxide atomic lattice are discussed …

Ferrimagnetic insulator materials are the enabling technology for the development of next‐
generation magnetic devices with low power consumption, high operation speed, and high …

Topological spin textures as an emerging class of topological matter offer a medium for
information storage and processing. The recently discovered topological Hall effect (THE) is …

Strong perpendicular magnetic anisotropy (PMA) is crucial for high-performance spintronic
devices. However, in transition-metal oxides, it is challenging to achieve an excellent PMA …

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from
the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly …

We reported a peculiar thickness dependence of perpendicular magnetic anisotropy (PMA),
stronger in thinner films, in spinel NiCo 2 O 4 (NCO) films deposited epitaxially on MgAl 2 O …

Manipulating topotactic phase transformations via orderly ion transfer in complex oxides
ABO x is ubiquitous in advanced applications such as ionotronics, ion-batteries and …

Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in
exploring pure spin current phenomena and developing ultralow-dissipation spintronic …

Perpendicular magnetic anisotropy (PMA) has recently been shown to emerge at interfaces
of 3 d and 5 d transition-metal oxides (TMOs). However, strategies to systematically stabilize …