The article overviews experimental results obtained by applying internal photoemission
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …

For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with
high-performance electronic systems, one of the greatest challenges is the realization of …

Two-dimensional (2D) materials have been demonstrated to be promising candidates to
design high performance photodetectors owing to their strong light–matter interaction …

Abstract 2D materials offer a pathway for further scaling of CMOS technology. However, for
this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same …

Here, we review the most recent developments in the field of 2-D electronics. We focus first
on the synthesis of 2-D materials, discussing the different growth techniques currently …

Defect characterization of 2D materials is a critical aspect for their successful integration in
future electronic devices. Here, a simple characterization technique is proposed that opens …

Internal photoemission of electrons (IPE) from large area one monolayer 2H‐MoS2 films
synthesized on top of amorphous (a−) SiO2 or Al2O3 is used to determine the energy of the …

Over the past decades, the continued scaling of transistors has reduced the energy
consumption for every switching event and has increased the computational power of …

Exploring the thickness-dependent electronic properties of ultrathin transition metal
dichalcogenides is crucial for novel optoelectronic devices. Particularly important is …

Internal photoemission spectroscopy was used to determine the valence band top energy
position in few-monolayer WS 2 and WSe 2 films directly synthesized on top of the SiO 2 …