nextnano is a semiconductor nanodevice simulation tool that has been developed for
predicting and understanding a wide range of electronic and optical properties of …

We analyze theoretically several crucial performance aspects of terahertz quantum cascade
lasers, such as the impact of doping on the threshold current, the relative importance of the …

We predict that within next 15 years a fundamental down-scaling limit for CMOS technology
and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room …

Abstract nextnano is a simulation tool that aims at providing global insight into the basic
physical properties of realistic three-dimensional mesoscopic semiconductor structures. It …

In this review paper we describe a hierarchy of simulation models for modeling state of the
art devices. Within the semiclassical simulation arena, emphasis is placed on particle-based …

We have developed a three-dimensional, self-consistent full-quantum transport simulator for
nanowire field effect transistors based on the eight-band k⋅ p method. We have constructed …

Both the field of spintronics-utilizing the spin degree of freedom of charge carriers-as well as
the field of graphene-a single layer of graphite-offer promising perspectives for a future …

We present an open-system quantum-mechanical 3D real-space study of the conduction
band structure and conductive properties of two semiconductor systems, interesting for their …

A nonequilibrium Green's function (NEGF) method for stationary carrier dynamics in open
semiconductor nanodevices is presented that includes all relevant incoherent scattering …

The main objective of Part I is to give an overview of some of the methods that have been
implemented into the nextnano {sup 3} software. Examples are discussed that give insight …