We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb
double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by …

In this work, we theoretically investigate the structural dependence of intersubband
absorption of InGaAsSb/GaAs single quantum well structures. We begin by analyzing the …

Room temperature carrier kinetics has been investigated in the type-II W-design
AlSb/InAs/Ga0: 80In0: 20As0: 15Sb0: 85/InAs/AlSb quantum well emitting in the mid-infrared …

Owing to its important role as an active layer for Vertical Cavity Surface Emitting laser
(VCSEL). We studied the transport properties in annealed GaInAsSb/GaSb by means of PTD …

Temperature-resolved photoluminescence studies were performed on tensely-strained
AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one …

This paper deals with thermal annealing time effects on thermal conductivity and optical
properties of GaInAsSb grown on GaSb substrate. An increased thermal conductivity as high …

The influence of growth interruption on the luminescence properties of the Ga (As, Sb)/GaAs
interface have been studied by continous wave and time resolved photoluminescence …

Modern optical gas detection systems utilize the technique of tunable laser absorption
spectroscopy for different applications in science, manufacture, or medicine. Superlattice …

Interband cascade lasers (ICLs) are highly efficient semiconductor lasers operating in the
mid-infrared range. Their cascade structure of multiple quantum wells enables continuous …

Here we present optical spectroscopy studies to examine structural and optical properties of
active region of quantum cascade lasers grown fully by MOCVD technique. The active part is …