This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …

In this study, C 29 H 32 O 17 was deposited onto p-type Si crystal to obtain Al/(C 29 H 32 O
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …

The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes
are a significant issue with more advantageous than the on-chip sensor. The sensitivity () …

In this study, both the Au/(ZnCdS: GO (1: 1) doped PVP)/n-Si and Au/(ZnCdS: GO (1: 0.5)
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …

In this paper, an organic interlayer, R s, and N ss on the transport-mechanisms (TMs), both
the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS)(SDs) were performed onto the …

In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO)
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …

In this work, both the Al-(p-Si)(MS) and Al-(Al2O3: PVP)-(p-Si)(MPS) structures were grown
onto the same p-type Si wafer in the same conditions to determine the (Al2O3: PVP) organic …

Here, the effects of PVC and carbon-nanotube (CNT)-doped PVC interlayers on the
electrical and dielectric properties of Au/(n-Si) Schottky diode (SD) were investigated …

In this paper, the cerium-oxide nanostructures (CeO2) were synthesized by using the
hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2: PVC)-Si …

To determine which of graphene (Gr) doping ratio (pure, 3–5%) into PVA is better or not, Gr-
based PVA organic thin film were grown between Al/p-Si by using electro-spinning …