Growth and applications of group III-nitrides
O Ambacher - Journal of physics D: Applied physics, 1998 - iopscience.iop.org
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
GaN: Processing, defects, and devices
SJ Pearton, JC Zolper, RJ Shul, F Ren - Journal of applied physics, 1999 - pubs.aip.org
The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
[图书][B] The blue laser diode: GaN based light emitters and lasers
S Nakamura, G Fasol - 2013 - books.google.com
Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …
materials has recently propelled these materials into the mainstream of interest. It is very …
The blue laser diode. The complete story
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …
that he enjoys this fact and wishes his readers to become familiar with his success …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Group III nitride semiconductors for short wavelength light-emitting devices
JW Orton, CT Foxon - Reports on progress in physics, 1998 - iopscience.iop.org
The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Growth of group III nitrides. A review of precursors and techniques
DA Neumayer, JG Ekerdt - Chemistry of materials, 1996 - ACS Publications
The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …
InGaN-based violet laser diodes
S Nakamura - Semiconductor Science and Technology, 1999 - iopscience.iop.org
High-efficiency light-emitting diodes emitting amber, green, blue and ultraviolet light have
been obtained through the use of InGaN active layers instead of GaN active layers. The …
been obtained through the use of InGaN active layers instead of GaN active layers. The …
III–V nitride based light-emitting devices
S Nakamura - Solid State Communications, 1997 - Elsevier
High brightness InGaN single-quantum-well structure (SQW) blue and green light-emitting
diodes (LEDs) with luminous intensities of 2 cd and 10 cd have been achieved and …
diodes (LEDs) with luminous intensities of 2 cd and 10 cd have been achieved and …