A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …

Flexible magnetic field nanosensors hold immense potential for wearable electronics,
offering a range of advantages such as comfort, real-time health monitoring, motion sensing …

Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements
is critical for future electronics with spin-transfer torque magnetoresistive random access …

We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque
magnetoresistive random access memory (STT-MRAM) devices by using double spin …

The development of double magnetic junctions for spin-transfer torque magnetoresistive
random access memory (STT-MRAM) is reviewed, with an emphasis on work from IBM. A …

Because of their nonvolatile nature and simple structure, the interest in MRAM devices has
been steadily growing in recent years. Reliable simulation tools, capable of handling …

We present a comprehensive benchmarking for spin-transfer torque (STT) and spin–orbit
torque (SOT) based random-access memories. Based on experimentally validated …

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …

Superparamagnetic tunnel junctions (SMTJs) are promising sources of randomness for
compact and energy-efficient implementations of probabilistic computing techniques …

We present an antiferromagnetically exchange-coupled composite (soft and hard layers)
spin torque oscillator (AF-ECC STO) and demonstrate its operation via both analytical and …