Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
[HTML][HTML] Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Group-III nitride heteroepitaxial films approaching bulk-class quality
J Wang, N Xie, F Xu, L Zhang, J Lang, X Kang, Z Qin… - Nature Materials, 2023 - nature.com
III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics
and electronics. Their application has progressed greatly thanks to the continuous quality …
and electronics. Their application has progressed greatly thanks to the continuous quality …
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong… - ECS Journal of Solid …, 2016 - iopscience.iop.org
Abstract" Ultra" wide-bandgap semiconductors are an emerging class of materials with
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
[HTML][HTML] Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet
photonics, where an understanding of its thermal properties is essential. Here, we measure …
photonics, where an understanding of its thermal properties is essential. Here, we measure …
[HTML][HTML] Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
Temperature-dependent electrical characteristics of β-Ga2O3 diodes with W Schottky contacts up to 500° C
The development of thermally stable contacts capable of high temperature operation are
necessary for Ga 2 O 3 high power rectifiers. We have measured the electrical …
necessary for Ga 2 O 3 high power rectifiers. We have measured the electrical …