In recent years, enormous efforts have been made to identify and manipulate the exotic
electrical and magnetic properties at a two-dimensional (2D) limit of various exciting …

Recent years have seen the development of spintronic devices and their applications in
biomedical areas. Spintronic devices rely on detecting or manipulating a magnetic field, a …

We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature
(RT) using CoFe/MgO/CoFe (001) epitaxial magnetic tunnel junctions (MTJs). The TMR ratio …

Magnetic tunnel junctions (MTJs) exhibit a great profusion of unique functional properties,
such as nonvolatility, scalability, high endurance, and low power consumption. For this …

A magnetic tunnel junction (MTJ) is a key device in spintronics applications, such as
magnetoresistive random access memory (MRAM). Current standard magnetic material for …

Spinel MgAl 2 O 4 and family oxides are emerging barrier materials useful for magnetic
tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429 …

Intelligent computing paradigms have become increasingly important for the efficient
processing of massive amounts of data. However, using traditional electronic devices to …

Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been
found to present excellent tunneling magnetoresistance (TMR) property, which has great …

The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but
its reduction at finite temperature is a severe drawback for applications. Here, we reveal a …

Nano-crystal domain structures formed in a MgO barrier and their effects on tunnel
magnetoresistance (TMR) in epitaxial fcc-Co 90 Fe 10 (CoFe)(111)/MgO (111)/CoFe (111) …