Noise and Defects in Microelectronic Materials and Devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
On the flicker noise in submicron silicon MOSFETs
E Simoen, C Claeys - Solid-State Electronics, 1999 - Elsevier
An overview is given of recent theoretical concepts and experimental findings with respect to
the flicker or 1/f noise in advanced silicon MOSFETs. First, a summary will be given of the …
the flicker or 1/f noise in advanced silicon MOSFETs. First, a summary will be given of the …
What Do We Certainly Know About Noise in MOSTs?
LKJ Vandamme, FN Hooge - IEEE Transactions on Electron …, 2008 - ieeexplore.ieee.org
1/f noise is a fluctuation in the conductance of semiconductors and metals. This noise could
be a fluctuation in the number of free electrons or in their mobility. Many experimental …
be a fluctuation in the number of free electrons or in their mobility. Many experimental …
Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is
strongly gate-length dependent. The current drive decreases during irradiation, and the …
strongly gate-length dependent. The current drive decreases during irradiation, and the …
Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …
1/f noise in CMOS transistors for analog applications
Y Nemirovsky, I Brouk… - IEEE transactions on …, 2001 - ieeexplore.ieee.org
Noise measurements of the 1/f noise in PMOS and NMOS transistors for analog applications
are reported under wide bias conditions ranging from subthreshold to saturation. Two" low …
are reported under wide bias conditions ranging from subthreshold to saturation. Two" low …
[图书][B] Noise in semiconductor devices
The operation of semiconductor devices is based on charge transport, ie on the motion of
free carriers in the conduction and valence bands. Under the effect of applied external forces …
free carriers in the conduction and valence bands. Under the effect of applied external forces …
1/f noise in CMOS transistors for analog applications from subthreshold to saturation
C Jakobson, I Bloom, Y Nemirovsky - Solid-State Electronics, 1998 - Elsevier
Detailed noise measurements of the 1/f noise in p-and n-mos transistors for analog
applications are reported under various bias conditions ranging from subthreshold to …
applications are reported under various bias conditions ranging from subthreshold to …