Majorana zero modes in superconductor–semiconductor heterostructures
Realizing topological superconductivity and Majorana zero modes in the laboratory is a
major goal in condensed-matter physics. In this Review, we survey the current status of this …
major goal in condensed-matter physics. In this Review, we survey the current status of this …
Field effect enhancement in buffered quantum nanowire networks
III–V semiconductor nanowires have shown great potential in various quantum transport
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids
Uniform, defect‐free crystal interfaces and surfaces are crucial ingredients for realizing high‐
performance nanoscale devices. A pertinent example is that advances in gate‐tunable and …
performance nanoscale devices. A pertinent example is that advances in gate‐tunable and …
Concomitant opening of a bulk-gap with an emerging possible Majorana zero mode
Majorana quasiparticles are generally detected in a 1D topological superconductor by
tunneling electrons into its edge, with an emergent zero-bias conductance peak (ZBCP) …
tunneling electrons into its edge, with an emergent zero-bias conductance peak (ZBCP) …
In situ epitaxy of pure phase ultra-thin InAs-Al nanowires for quantum devices
We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by
molecular-beam epitaxy. Our InAs nanowire diameter (∼ 30 nm) is much thinner than before …
molecular-beam epitaxy. Our InAs nanowire diameter (∼ 30 nm) is much thinner than before …
Dimension engineering of high-quality InAs nanostructures on a wafer scale
Low-dimensional narrow-band-gap III–V semiconductors are key building blocks for the next
generation of high-performance nanoelectronics, nanophotonics, and quantum devices …
generation of high-performance nanoelectronics, nanophotonics, and quantum devices …
Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy
In-plane InAs nanowires and nanowire networks show great potential to be used as building
blocks for electronic, optoelectronic and topological quantum devices, and all these …
blocks for electronic, optoelectronic and topological quantum devices, and all these …
Shadowed versus Etched Superconductor–Semiconductor Junctions in Al/InAs Nanowires
Hybrid semiconductor–superconductor nanowires have emerged as a cornerstone in
modern quantum devices. Integrating such nanowires into hybrid devices typically requires …
modern quantum devices. Integrating such nanowires into hybrid devices typically requires …
Chiral -wave superconductivity in a twisted array of proximitized quantum wires
A superconductor with px+ ipy order has long fascinated the physics community because
vortex defects in such a system host Majorana zero modes. Here, we propose a simple …
vortex defects in such a system host Majorana zero modes. Here, we propose a simple …
Enhanced topological protection in planar quasi-one-dimensional channels with periodically modulated width
BD Woods, TD Stanescu - Physical Review B, 2020 - APS
We study one-dimensional (1D) and quasi-1D periodic structures as possible platforms for
the emergence of Majorana bound states with enhanced robustness against disorder and …
the emergence of Majorana bound states with enhanced robustness against disorder and …