(57) ABSTRACT A resistance-variable memory device includes memory cells, a high
Voltage circuit, a precharging circuit, a bias circuit, and a sense amplifier. Each memory cell …

A multi-level nonvolatile memory device using variable resistive element with improved
reliability of read operations is provided. A multi-level nonvolatile memory device comprises …

In one aspect, a non-volatile semiconductor memory device includes a phase phase-change
memory cell array including a plurality of word lines, a plurality of bit lines, and a plurality of …

Nonvolatile memory devices include an array of variable-resistance memory cells and a
write driver electrically coupled to the array. The write driver is configured to drive a bit line in …

The present invention relates to a resistance variable memory device, and more particularly,
to a resistance variable memory device capable of preventing an effect of coupling noise …

It is a feature of exemplary embodiments to provide a phase-change random access
memory (PRAM) device that discharges bit lines before a write operation and a read opera …

US20110170332A1 - Methods of Driving Nonvolatile Memory Devices that Utilize Read/Write
Merge Circuits - Google Patents US20110170332A1 - Methods of Driving Nonvolatile Memory …

A memory cell device is provided which includes a substrate, a plurality of unit memory cells
connected between a word line and respective bit lines, where each memory cell including a …

A phase change memory device has a word line driver layout which allows for a reduction in
the size a core area of the device. In one aspect, phase change memory device includes a …

(57) ABSTRACT A nonvolatile semiconductor integrated circuit includes a memory cell array
configured to include each of memory cells having a variable resistor, a current sensing unit …