A comprehensive review on microwave FinFET modeling for progressing beyond the state of art
FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …
attention to progress further into the nanometer era by going beyond the downscaling limit of …
Device design guideline of 5-nm-node FinFETs and nanosheet FETs for analog/RF applications
Analog/RF performances of 5-nm node bulk fin-shaped field-effect transistors (FinFETs) and
nanosheet FETs (NSFETs) were investigated and compared thoroughly using fully …
nanosheet FETs (NSFETs) were investigated and compared thoroughly using fully …
The large world of FET small‐signal equivalent circuits
The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …
an evergreen and ever flourishing research field that has to be up‐to‐date with …
Subthreshold analog/RF performance enhancement of underlap DG FETs with high-k spacer for low power applications
This paper presents a systematic study of the subthreshold analog/RF performance for
underlap double gate (UDG) NMOSFETs using high dielectric constant (k) spacers. The …
underlap double gate (UDG) NMOSFETs using high dielectric constant (k) spacers. The …
A new millimeter-wave small-signal modeling approach for pHEMTs accounting for the output conductance time delay
A new technique is developed for determining analytically a millimeter-wave small-signal
equivalent-circuit model of GaAs pseudomorphic HEMTs from scattering parameter …
equivalent-circuit model of GaAs pseudomorphic HEMTs from scattering parameter …
Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance
In this paper, the characteristics of 18 nm Underlap Double Gate (U-DG) NMOSFET with
gate stack,(GS) are presented. The high-k dielectric as gate insulator under consideration is …
gate stack,(GS) are presented. The high-k dielectric as gate insulator under consideration is …
Non-quasi-static intrinsic GaN-HEMT model
BJ Touchaei, M Shalchian - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
This article presents a small-signal model of intrinsic gallium nitride high electron mobility
transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge …
transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge …
Analysis of High- Spacer Asymmetric Underlap DG-MOSFET for SOC Application
In this paper, asymmetric underlap double-gate (AUDG) MOSFET is studied to analyze the
influence of high-k spacer on the intrinsic device parameters. The AUDG-MOSFET …
influence of high-k spacer on the intrinsic device parameters. The AUDG-MOSFET …
A multi-finger ghz frequency doubler based on amorphous indium gallium zinc oxide thin film transistors
This paper presents a multi-finger doubler based on amorphous-indium gallium zinc oxide
(a-IGZO) thin film transistors (TFT) operating at GHz frequency. The doubler and the TFTs …
(a-IGZO) thin film transistors (TFT) operating at GHz frequency. The doubler and the TFTs …
Investigation on the non‐quasi‐static effect implementation for millimeter‐wave FET models
The present article analyzes in detail different intrinsic small‐signal models for transistors.
Particular attention is devoted to the non‐quasi‐static effects, which play a crucial role at …
Particular attention is devoted to the non‐quasi‐static effects, which play a crucial role at …