Effect of frequency on total ionizing dose response of ring oscillator circuits at the 7-nm bulk FinFET node
Total ionizing dose (TID) effects at the 7-nm bulk FinFET node are characterized under
dynamic and static test conditions through changes in ring oscillator (RO) frequencies …
dynamic and static test conditions through changes in ring oscillator (RO) frequencies …
Radiation Effects in VLSI Circuits-Part II: Hardening Techniques
A Kannaujiya, AP Shah - IETE Technical Review, 2024 - Taylor & Francis
This work presents a comprehensive review on radiation hardening techniques aimed at
enhancing the resilience of VLSI circuits against soft errors. The study covers a wide …
enhancing the resilience of VLSI circuits against soft errors. The study covers a wide …
Supply voltage dependence of ring oscillator frequencies for total ionizing dose exposures for 7-nm bulk FinFET technology
Total ionizing dose (TID) effects at the 7-nm bulk FinFET node are characterized through
changes in ring oscillator (RO) frequencies and current as a function of V DD to model delay …
changes in ring oscillator (RO) frequencies and current as a function of V DD to model delay …
Comparison of total ionizing dose effects in 22-nm and 28-nm FD SOI technologies
Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were
studied at the 22-nm FD SOI technology node and compared with the testing results from the …
studied at the 22-nm FD SOI technology node and compared with the testing results from the …
Investigation of radiation effects on FD-SOI Hall sensors by TCAD simulations
L Fan, J Bi, K Xi, G Yan - Sensors, 2020 - mdpi.com
This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall
sensors to the three main types of irradiation ionization effects, including the total ionizing …
sensors to the three main types of irradiation ionization effects, including the total ionizing …
Improved model on buried-oxide damage induced by total-ionizing-dose effect for HV SOI LDMOS
In this article, an improved model on buried-oxide (BOX) damage induced by total-ionizing-
dose (TID) effect considering positive oxide trapped charge () generated in silicon on …
dose (TID) effect considering positive oxide trapped charge () generated in silicon on …
Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs
S Bonaldo, S Mattiazzo, M Bagatin, A Paccagnella… - Electronics, 2023 - mdpi.com
The total ionizing dose sensitivity of planar 150 nm CMOS technology is evaluated by
measuring the DC responses of nMOSFETs at several irradiation steps up to 125 krad …
measuring the DC responses of nMOSFETs at several irradiation steps up to 125 krad …
Comparison of various factors affected TID tolerance in FinFET and nanowire FET
H Won, I Ham, Y Jeong, M Kang - Applied Sciences, 2019 - mdpi.com
Analysis of the radiation effects in a device is of great importance. The gate all around (GAA)
structure that contributes to device scaling not only solves the short channel effects (SCE) …
structure that contributes to device scaling not only solves the short channel effects (SCE) …
Total Ionizing Dose Impact on 22-nm FD-SOI Ring Oscillator Current and Frequency
LT Clark, WE Brown… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
Total ionizing dose (TID) has a significant effect on silicon-on-insulator (SOI) circuits,
manifesting primarily as a front-gate threshold voltage () shift. This article presents data on …
manifesting primarily as a front-gate threshold voltage () shift. This article presents data on …
Total ionizing dose and single event effect response of 22 nm ultra-thin body and buried oxide fully depleted silicon-on-insulator technology
Y Yin, H Ma, Q Zheng, J Chen, X Duan, P Zhang… - Microelectronics …, 2024 - Elsevier
The test chip including transistors and Static Random Access Memory (SRAM) is proposed
and fabricated by an advanced 22 nm Ultra-Thin Body and Buried Oxide Fully Depleted …
and fabricated by an advanced 22 nm Ultra-Thin Body and Buried Oxide Fully Depleted …