We review the current status of nondestructive high-resolution X-ray diffractometry research
on semiconductor structures with quantum dots (QDs). The formalism of the statistical theory …

Linear and nonlinear optical properties of In x Ga 1-x As/GaAs lens-shaped quantum dots
were investigated, taking into account simultaneous effects of indium segregation, In/Ga …

In this work, we have theoretically investigated the indium segregation and In/Ga intermixing
effects in lens-shaped In x Ga 1-x As/GaAs quantum dots coupled to their wetting layer. In …

The effect of the lattice-mismatch strain and of the charge carrier confinement profile, on the
optical properties of thermally annealed self-assembled In x Ga 1− x As/GaAs quantum dots …

The in-plane photoconductivity and photoluminescence are investigated in quantum dot-
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …

We numerically investigate the Nonlinear Optical Rectification (NOR) of two laterally coupled
lens-shaped In x Ga 1-x As/GaAs quantum dots and two layers of In x Ga 1-x As/GaAs …

Understanding the electrical and optical properties of InAs/GaAs (Sb) quantum dots (QDs) is
essential for designing and improving the performance of related semiconductor QD …

We have investigated the effects of size, hydrostatic pressure, temperature, electric field, and
inhomogeneous indium distribution on sub-band electronic properties and the second …

We present anisotropic nonparabolic position-dependent effective-mass calculations of the
bound energy levels of electrons confined in lens-shaped In x Ga 1− x As quantum dots …

Представлено современное состояние неразрушающих исследований
полупроводниковых структур с квантовыми точками (КT) в рамках метода …