In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase
separation from supersaturated solid solutions is reviewed. Different methods to synthesize …

Spectroscopic ellipsometry (SE) is a powerful technique for the characterization of materials,
which is able to probe in a sensitive way their nanostructure as well as to get rich information …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Ge nanoclusters (NCs), synthesized by ion implantation and annealing up to 900 C, result
small (∼ 2 nm) and amorphous in Si 3 N 4, crystalline and much larger in SiO 2. The NCs …

Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for
energy applications. In this work, we report an efficient tuning mechanism of the light …

Germanium quantum dots (QDs) embedded in SiO 2 or in Si 3 N 4 have been studied for
light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced …

Extinction spectra of colloidal germanium nanocrystals suspended in benzonitrile without
the use of ligands were measured, and absolute absorption cross sections are reported …

In this work, we investigate the spectral response of metal-oxide-semiconductor
photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO 2) …

We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs)
embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of …

Multilayers of Ge quantum dots (QDs, 3 nm in diameter) embedded in SiO 2, separated by
SiO 2 barrier layer (3, 9, or 20 nm thick), have been synthesized by sputter deposition and …