Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
WJ Gallagher, SSP Parkin - IBM Journal of Research and …, 2006 - ieeexplore.ieee.org
This paper reviews the remarkable developments of the magnetic tunnel junction over the
last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and …
last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and …
Thermally assisted MRAM
IL Prejbeanu, M Kerekes, RC Sousa… - Journal of Physics …, 2007 - iopscience.iop.org
Magnetic random access memories (MRAMs) are a new non-volatile memory technology
trying establish itself as a mainstream technology. MRAM cell operation using a thermally …
trying establish itself as a mainstream technology. MRAM cell operation using a thermally …
Magnetoresistive random access memory
In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …
presented. The various MRAM generations are described with a particular focus on spin …
Current switched magnetoresistive memory cell
JM Daughton, AV Pohm, MC Tondra - US Patent 6,744,086, 2004 - Google Patents
(57) ABSTRACT A ferromagnetic thin-film based digital memory cell with a memory film of an
anisotropic ferromagnetic material and with a Source layer positioned on one side thereof …
anisotropic ferromagnetic material and with a Source layer positioned on one side thereof …
Precessional spin current structure for MRAM
MM Pinarbasi, M Tzoufras - US Patent 9,853,206, 2017 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Spin transfer torque structure for MRAM devices having a spin current injection capping layer
BA Kardasz, MM Pinarbasi - US Patent 9,728,712, 2017 - Google Patents
A magnetoresistive random-access memory (MRAM) device is disclosed. The device
described herein has a spin current injection capping layer between the free layer of a …
described herein has a spin current injection capping layer between the free layer of a …
Memory cell having magnetic tunnel junction and thermal stability enhancement layer
M Pinarbasi, B Kardasz - US Patent 9,741,926, 2017 - Google Patents
(57) ABSTRACT A magnetoresistive random-access memory (MRAM) device is disclosed.
The device described herein has a thermal stability enhancement layer over the free layer of …
The device described herein has a thermal stability enhancement layer over the free layer of …
Precessional spin current structure with non-magnetic insertion layer for MRAM
BA Kardasz, MM Pinarbasi - US Patent 10,665,777, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
High speed low power annular magnetic devices based on current induced spin-momentum transfer
(57) ABSTRACT A high speed and low power method to control and Switch the
magnetization direction and/or helicity of a magnetic region in a magnetic device for memory …
magnetization direction and/or helicity of a magnetic region in a magnetic device for memory …
Precessional spin current structure with high in-plane magnetization for MRAM
MM Pinarbasi, BA Kardasz - US Patent 10,672,976, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …