GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

In this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes
(µLEDs) is numerically investigated. Our results show that the external quantum efficiency …

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-
GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier …

Carrier imbalance resulting from stronger electron injection from ZnO into quantum‐dot (QD)
emissive layer than hole injection is one critical issue that constrains the performance of …

InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly
suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization …

In order to investigate the photoelectric characteristics of 80× 120 µm 2 mini-light-emitting-
diodes (mini-LEDs) with sidewall passivation by atomic layer deposition (ALD), this paper …

The drift velocity for holes is strongly influenced by the electric field in the p-type hole
injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this …

In this study, we investigated the temperature-dependent photoluminescence characteristics
of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN …

In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as
the dielectric layers in p+-Al0. 55Ga0. 45N/AlGaN/n+-Al0. 55Ga0. 45N polarization tunnel …

In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are
usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong …