Investigation of field-free switching of 2-D material-based spin–orbit torque magnetic...

Y Yuan, Y Jiang - Semiconductor Science and Technology, 2024 - iopscience.iop.org

Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-
access memory, plays important role in the cutting-edge spintronics. In the MTJ devices …

Impact of Unconventional Torque on the Performance of Weyl-Semimetal-Based SOT-MTJ: A Micromagnetic Study

M Shashidhara, S Srivatsava, S Panwar… - … on Electron Devices, 2024 - ieeexplore.ieee.org

Effective spin manipulation is one of the fundamental aspects of spin-orbit torque (SOT)
magnetic tunnel junction (MTJ) for low-power logic and memory applications. The …

[HTML][HTML] Field-free spin–orbit torque switching of magnetic tunnel junction structure based on two-dimensional van der Waals WTe2

Y Yuan, Y Jiang - AIP Advances, 2024 - pubs.aip.org

In recent years, two-dimensional van der Waals (2D vdWs) heterostructures have attracted
great research interest due to their great potential in fundamental physics research and …

Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance

M Shashidhara, S Srivastava, S Panwar… - Solid-State Electronics, 2023 - Elsevier

Abstract Two-dimensional (2D) material-based Spin-orbit torque (SOT) Magnetic tunnel
junction (MTJ) has drawn a lot of research interest due to its potential for low power logic …

Configurable 8T SRAM-based Computing In-Memory Architecture for Enabling Shift Operation and Multibit Dot-Product Engines

C Yeswanth, S Panwar, S Srivastava… - 2023 IEEE Devices …, 2023 - ieeexplore.ieee.org

The conventional computing system in our laptops and mobile phones uses Von-Neumann
architecture. Computing In-Memory (CiM) acts as the bottleneck for modern data-intensive …