A comprehensive experimental study of the photoluminescence (PL) spectral evolution
under a magnetic field (B⩽ 25 T) applied perpendicularly to a high-mobility two-dimensional …

We calculate the density of states of a two-dimensional electron gas located at the interface
of a strongly disordered Ga Al As∕ Ga As heterojunction. The disorder potential is created …

We have investigated experimentally and theoretically the effect of repulsive and attractive
ionized impurities on the resistivity components (ρ xx and ρ xy) in the quantum Hall effect …

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-
type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel …

In this thesis, we have investigated the optical and transport properties of a pin GaAs-AlAs
resonant tunneling diode (RTD). The possibility of controlling and significantly varying the …

Вінницький національний технічний університет Факультет інфокомуні Page 1
Вінницький національний технічний університет (повне найменування вищого …

Показано, что изучение свойств гигантских оптических флуктуаций в структурах с
GaAs/AlGaAs квантовыми ямами в условиях квантового эффекта Холла важно для …

Magnetophotoluminescence emissions were measured from modulation doped
GaAs/AlGaAs asymmetric double quantum wells, wherein a thin barrier (25 Å) was …

Abstract A two-dimensional (2D) electron system in a perpendicular magnetic field acts like
a macroscopic strongly correlated source of radiation with inherent temporal and spatial …

Far-infrared (FIR) cyclotron resonance of a high-mobility two-dimensional electron gas
(2DEG) in a GaAs/(Al, Ga) As single heterojunction is detected by resonant modulation of …