Genuine and faux single centers in carbon-implanted silicon

A Durand, Y Baron, F Cache, T Herzig, M Khoury… - Physical Review B, 2024 - APS
Among the wide variety of single fluorescent defects investigated in silicon, numerous
studies have focused on color centers with a zero-phonon line around 1.28 µ m and …

Computationally Driven Discovery of T Center-like Quantum Defects in Silicon

Y Xiong, J Zheng, S McBride, X Zhang… - Journal of the …, 2024 - ACS Publications
Quantum technologies would benefit from the development of high-performance quantum
defects acting as single-photon emitters or spin-photon interfaces. Finding such a quantum …