Assembly of one dimensional inorganic nanostructures into functional 2D and 3D architectures. Synthesis, arrangement and functionality
RK Joshi, JJ Schneider - Chemical Society Reviews, 2012 - pubs.rsc.org
This review will focus on the synthesis, arrangement, structural assembly, for current and
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …
Doping of semiconductor nanowires
J Wallentin, MT Borgström - Journal of Materials Research, 2011 - cambridge.org
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity doping. In this review article, we discuss the key results in the field of semiconductor …
impurity doping. In this review article, we discuss the key results in the field of semiconductor …
Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
We report growth by molecular beam epitaxy and structural characterization of gallium-
nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio …
nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio …
Selective-area growth of III-V nanowires and their applications
We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-
organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning …
organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning …
Doping challenges and pathways to industrial scalability of III–V nanowire arrays
W Kim, L Güniat, A Fontcuberta i Morral… - Applied Physics …, 2021 - pubs.aip.org
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Modulation doping of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility
Reliable doping is required to realize many devices based on semiconductor nanowires.
Group III–V nanowires show great promise as elements of high-speed optoelectronic …
Group III–V nanowires show great promise as elements of high-speed optoelectronic …
Electron mobilities approaching bulk limits in “surface-free” GaAs nanowires
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major
challenge facing the development of nanowire-based electronic devices. Here we …
challenge facing the development of nanowire-based electronic devices. Here we …
Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
We present detailed results about the molecular beam epitaxy (MBE) growth of GaAs
nanowires (NWs) on GaAs (111) B substrates prepared for the growth by a new method …
nanowires (NWs) on GaAs (111) B substrates prepared for the growth by a new method …
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors
S Morkötter, N Jeon, D Rudolph, B Loitsch… - Nano …, 2015 - ACS Publications
Strong surface and impurity scattering in III–V semiconductor-based nanowires (NW)
degrade the performance of electronic devices, requiring refined concepts for controlling …
degrade the performance of electronic devices, requiring refined concepts for controlling …
Increased photoconductivity lifetime in GaAs nanowires by controlled n-type and p-type doping
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based
electronic and optoelectronic devices. Here, we present a noncontact method based on time …
electronic and optoelectronic devices. Here, we present a noncontact method based on time …