In this study, we enlighten about the field effect transistors (FET) and their technologies. As
far as very large integration is concerned, researchers are continuously focusing on scaling …

The increasing threat of security attacks on hardware security applications has driven
research towards exploring beyond CMOS devices as an alternative. Spintronic devices …

Design, Simulation and Comparative Analysis of Performance Parameters of a 4-bit CMOS
based Full Adder Circuit using Microwind a Page 1 IOSR Journal of VLSI and Signal …

In this paper, the design steps of an n-MOSFET have been described and then the electrical
characterization of this MOSFET is simulated at 100 nm by using the SILVACO ATLAS …

This work describes a design process, simulation, and analysis of a CMOS-based common
source amplifier circuit in the Cadence Virtuoso environment at the 45 nm technology node …

The recent growth in application areas in civil and military telecommunication engineering
and technology has generated bulk consumer marketplaces for systems based on radio …

The dimensions of the various types of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) device structures are being shrunk continuously to accommodate more …

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new
technology, which exploits the two fundamental degrees of freedom-spin-state and charge …

In this paper, we explained how to develop a 4-bit comparator circuit at the Complementary
Metal Oxide Semiconductor (CMOS) technology nodes of 90 nm, 65 nm, and 45 nm, draw …

The increasing demand for data rate for mobile telecommunications has led to the use of
beamforming systems in order to notably limit the impact of free space propagation losses …