Heavy ion displacement damage effect in carbon nanotube field effect transistors
Recent advances in carbon nanotube (CNT)-based integrated circuits have shown their
potential in deep space exploration. In this work, the mechanism governing the heavy-ion …
potential in deep space exploration. In this work, the mechanism governing the heavy-ion …
Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
G Termo, G Borghello, F Faccio, S Michelis… - Nuclear Instruments and …, 2024 - Elsevier
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …
Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
DM Fleetwood - Applied Physics Letters, 2022 - pubs.aip.org
This article provides a brief overview and perspective on the radiation response of
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
Layout dependence of total ionizing dose effects on 12-nm bulk FinFET core digital structures
T Wallace, M Spear, A Privat… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
An apparent layout dependence for total ionizing dose (TID) susceptibility in a commercial
12-nm fin-based field-effect transistor (FinFET) technology is identified. While drain current …
12-nm fin-based field-effect transistor (FinFET) technology is identified. While drain current …
Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors
M Titze, A Belianinov, A Tonigan, SS Su… - ACS Applied …, 2024 - ACS Publications
Recent developments in state-of-the-art (SOTA) complementary metal-oxide-
semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response …
semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response …
Enhanced total ionizing dose response of 16 nm n-FinFETs with a single fin
X Wei, J Cui, D Luo, G Yu, Y Li, Q Guo… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this letter, total ionizing dose (TID) response of bulk n-type Fin Field-Effect Transistor (n-
FinFET) is investigated with the various number of fins. Experiments show that only the …
FinFET) is investigated with the various number of fins. Experiments show that only the …
Total ionizing dose and proton single event effects in AMD Ryzen processor fabricated in a 12-nm bulk FinFET process
JL Taggart, SC Davis, R Daniel… - 2023 IEEE Radiation …, 2023 - ieeexplore.ieee.org
The Aerospace Corporation performed total ionizing dose (TID) and proton testing on the
AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4 …
AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4 …
[HTML][HTML] Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM
This paper discusses the stuck bits induced by the gate breakdown of PMOS in the sub-20
nm FinFET static random access memory (SRAM) device. After the heavy-ion experiment …
nm FinFET static random access memory (SRAM) device. After the heavy-ion experiment …
Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory
J Ha, M Bang, G Lee, M Suh, CE Kim, J Kim - IEEE Access, 2023 - ieeexplore.ieee.org
In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T)
static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor …
static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor …
Comparison of Total Ionizing Dose Effects in 16nm Core and I/O n-FinFETs
H Wu, J Cui, Y Li, Q Guo… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Total ionizing dose (TID) response of 16-nm core and input–output (I/O) n-type fin field-effect
transistors (n-FinFETs) with various gate lengths and fin numbers are investigated in this …
transistors (n-FinFETs) with various gate lengths and fin numbers are investigated in this …