In this paper we review the models and their parameters to describe the relative permittivity,
bandgap, impact ionization, mobility, charge carrier recombination/effective masses and …

In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon
counterparts in power conversion applications due to their performance superiority. SiC …

In this article, we propose the use of p-type retrograde implants (RPs) for enhanced device
performance and alleviated temperature dependence of leakage current in 4H-SiC junction …

Avalanche robustness in dynamic operation is one of the main obstacles to further promote
the commercialization of SiC MOSFETs. In this paper, a cell-level optimization design is …

In this article, a new silicon power Schottky source MOSFET (S-MOS) architecture is
proposed by introducing an integrated retrograde p-well Schottky contact super barrier …

A silicon carbide p-channel insulated gate bipolar transistor (IGBT) with higher breakdown
voltage (BV) and low VF· C res figure of merit (FOM) has been simulated, fabricated, and …

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher
than 10kV can improve Medium Voltage and High Voltage power electronics due to the …

In this article, a gate engineering technique is used in Insulated gate bipolar transistor
(IGBT) for fast switching applications. The modification consists of stepped oxide pattern at …

Conventional planar-and trench-gate silicon carbide insulated-gate bipolar transistors (SiC
C-IGBT and T-IGBT) suffer from higher turn-OFF loss () and ON-state voltage drop []. An …

In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance
between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation …