Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

P Lopez-Varo, L Bertoluzzi, J Bisquert, M Alexe, M Coll… - Physics Reports, 2016 - Elsevier
Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on
efficient light absorption, charge separation of electron–hole pair carriers or excitons, and …

Hybrid improper ferroelectricity: a theoretical, computational, and synthetic perspective

NA Benedek, MA Hayward - Annual Review of Materials …, 2022 - annualreviews.org
We review the theoretical, computational, and synthetic literature on hybrid improper
ferroelectricity in layered perovskite oxides. Different ferroelectric mechanisms are described …

Theory of cross phenomena and their coefficients beyond Onsager theorem

ZK Liu - Materials Research Letters, 2022 - Taylor & Francis
Cross phenomena, representing responses of a system to external stimuli, are ubiquitous
from quantum to macro scales. The Onsager theorem is often used to describe them, stating …

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

R Guido, PD Lomenzo, MR Islam, N Wolff… - … Applied Materials & …, 2023 - ACS Publications
The discovery of ferroelectricity in aluminum scandium nitride (Al1–x Sc x N) opens
technological perspectives for harsh environments and space-related memory applications …

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

DH Choe, S Kim, T Moon, S Jo, H Bae, SG Nam… - Materials Today, 2021 - Elsevier
Fluorite-structure ferroelectrics—in particular the orthorhombic phase of HfO 2—are of
paramount interest to academia and industry because they show unprecedented scalability …

Solvated electrons in solids—ferroelectric large polarons in lead halide perovskites

F Wang, Y Fu, ME Ziffer, Y Dai… - Journal of the …, 2020 - ACS Publications
Solvation plays a pivotal role in chemistry and biology. A solid-state analogy of solvation is
polaron formation, but the magnitude of Coulomb screening is typically an order of …

Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

S Dasgupta, A Rajashekhar… - IEEE Journal on …, 2015 - ieeexplore.ieee.org
Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is
experimentally demonstrated in MOSFETs with PbZr 0.52 Ti 0.48 O 3 as a ferroelectric (FE) …

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

N Zagni, FM Puglisi, P Pavan… - Proceedings of the …, 2023 - ieeexplore.ieee.org
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

An automatically curated first-principles database of ferroelectrics

TE Smidt, SA Mack, SE Reyes-Lillo, A Jain, JB Neaton - Scientific data, 2020 - nature.com
Ferroelectric materials have technological applications in information storage and electronic
devices. The ferroelectric polar phase can be controlled with external fields, chemical …

Sliding phase transition in ferroelectric van der Waals bilayers

P Tang, GEW Bauer - Physical review letters, 2023 - APS
We address the sliding thermodynamics of van der Waals-bonded bilayers by continuum
electromechanics. We attribute the robustness of the ferroelectricity recently observed in h …