Finite Element Simulation and Sensitivity Analysis of the Cohesive Parameters for Delamination Modeling in Power Electronics Packages
Delamination is a critical failure mode in power electronics packages that can significantly
impact their reliability and performance, due to the large amounts of electrical power …
impact their reliability and performance, due to the large amounts of electrical power …
[HTML][HTML] The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
This letter reports on the improvement of a SiO 2 layer formed by atomic layer deposition on
4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage …
4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage …
Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors
High resolution radiation detection has been demonstrated using Ni/SiO 2/n-4H-SiC metal-
oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers …
oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers …
Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications
This letter reports on initial investigation results on the material quality and device suitability
of a homo-epitaxial 3C-SiC growth process. Atomic force microscopy surface investigations …
of a homo-epitaxial 3C-SiC growth process. Atomic force microscopy surface investigations …
(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface …
An investigation into the effect of deposition, growth and conditioning of the SiO2/SiC
interface in MOS capacitors is performed, where the enhancement of reliability is …
interface in MOS capacitors is performed, where the enhancement of reliability is …
Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
M Yakut, A Roy, F Arith, A Whitworth… - Solid State …, 2024 - Trans Tech Publ
We present the improvement of SiO2/4H-SiC interface quality and high field-effect (FE)
mobility (µFE) in 4H-SiC MOSFETs. This is achieved by introducing a nitrous oxide (N2O) …
mobility (µFE) in 4H-SiC MOSFETs. This is achieved by introducing a nitrous oxide (N2O) …
High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition
A study on the impact of different growth and deposition techniques on the reliability of
silicon dioxide (SiO2) layers on silicon carbide (SiC) metal-oxide-semiconductor capacitors …
silicon dioxide (SiO2) layers on silicon carbide (SiC) metal-oxide-semiconductor capacitors …
Development of Schottky and MOS interfaces for SiC power devices
AB Renz - 2021 - wrap.warwick.ac.uk
The very nature of the wide bandgap semiconductor silicon carbide (SiC), namely its high
critical electric field, thermal conductivity and stable native oxide, silicon dioxide (SiO2), has …
critical electric field, thermal conductivity and stable native oxide, silicon dioxide (SiO2), has …
[引用][C] Merve Yakut¹, a*, Atreyee Roy1, b, Faiz Arith2, Andrew Whitworth3, d, Andrew Alexander³, Jacek Gryglewicz³, f, Jake Sheriff1, 9, Sarah Olsen1, h, Konstantin …
A Alexander, J Gryglewicz… - Formation of Solid …, 2024 - Trans Tech Publications Ltd