O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs
Q Wang, M Pan, P Zhang, L Wang, Y Yang, X Xie… - IEEE …, 2023 - ieeexplore.ieee.org
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …