Technological progress makes it possible to significantly reduce the size of semiconductor
laser emitters to microscales and sizes commensurate with the emission wavelength …

Quantum transduction between the microwave and optical domains is an outstanding
challenge for long-distance quantum networks based on superconducting qubits. For all …

Passivation capping of molecular beam epitaxy (MBE)-grown InAs surface quantum dots
(SQDs) is achieved by ex situ atomic layer deposition (ALD)-grown ZnO using diethylzinc …

Herein, the impact of arsenolite oxide (As2O3) crystallites on the structural and optical
properties of porous gallium arsenide (GaAs) is examined, focusing on understanding the …

Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a
standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of …

Our work investigates the precise tuning of InGaAs quantum dots (QDs) embedded into
microposts by leveraging HfO 2 crystallization-induced micro-strain via laser annealing. We …

In this study, the effect of plasma treatment on the photoluminescence (PL) of GaAs surface
by Ar, O 2 and Ar/O 2 mixed plasma was investigated. The influence of process parameters …

Generation of single and entangled photons is crucial for photonic quantum information
processing. Quantum dots (QDs) are promising sources capable of producing high-quality …

The surface of semiconductor nanostructures has a major impact on their electronic and
optical properties. Disorder and defects in the surface layer typically cause degradation of …

We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by
fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are …