Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

Complementary metal oxide semiconductor-compatible short-and midwave infrared emitters
are highly coveted for the monolithic integration of silicon-based photonic and electronic …

GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full
CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we …

Compound semiconductors have been the predominant building blocks for the current
midinfrared thermophotovoltaic devices relevant to sub-heat conversion and power …

Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits
their integration into practical applications. While structural defects in epitaxial GeSn layers …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on
rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was …