AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC
J Yin, D Chen, H Yang, Y Liu, DN Talwar, T He… - Journal of Alloys and …, 2021 - Elsevier
A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …
[HTML][HTML] Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification
B Tang, H Hu, H Wan, J Zhao, L Gong, Y Lei… - Applied Surface …, 2020 - Elsevier
We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by
introducing voids during growth. Voids are embedded into AlN epilayers through a growth …
introducing voids during growth. Voids are embedded into AlN epilayers through a growth …
High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD
H Long, J Dai, Y Zhang, S Wang, B Tan… - Applied physics …, 2019 - pubs.aip.org
In this letter, we demonstrate a crack and strain free AlN epilayer with a thickness of 10.6 μm
grown on a pyramidal patterned sapphire substrate by metalorganic chemical vapor …
grown on a pyramidal patterned sapphire substrate by metalorganic chemical vapor …
High-quality AlN growth on flat sapphire at relatively low temperature by crystal island shape control method
Y Zhang, J Yang, D Zhao, F Liang, P Chen, Z Liu - Applied Surface Science, 2022 - Elsevier
In this study, we found that the two-step method for heteroepitaxial AlN on sapphire has
some limitations. Growing the buffer layer for a too long time will make it challenging to …
some limitations. Growing the buffer layer for a too long time will make it challenging to …
Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices
Q Zhang, M Chen, H Liu, X Zhao, X Qin, F Wang… - Materials, 2021 - mdpi.com
In this work, we systematically studied the deposition, characterization, and crystal structure
modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material …
modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material …
[HTML][HTML] Band alignment of B0. 14Al0. 86N/Al0. 7Ga0. 3N heterojunction
Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential
to be used in deep ultraviolet and power electronic device applications. However, the band …
to be used in deep ultraviolet and power electronic device applications. However, the band …
100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10%
Growing thicker BAlN films while maintaining single‐phase wurtzite structure and boron
content over 10% has been challenging. In this study, we report on the growth of 100 nm …
content over 10% has been challenging. In this study, we report on the growth of 100 nm …