AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …

Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …

We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by
introducing voids during growth. Voids are embedded into AlN epilayers through a growth …

In this letter, we demonstrate a crack and strain free AlN epilayer with a thickness of 10.6 μm
grown on a pyramidal patterned sapphire substrate by metalorganic chemical vapor …

In this study, we found that the two-step method for heteroepitaxial AlN on sapphire has
some limitations. Growing the buffer layer for a too long time will make it challenging to …

In this work, we systematically studied the deposition, characterization, and crystal structure
modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material …

Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential
to be used in deep ultraviolet and power electronic device applications. However, the band …

Growing thicker BAlN films while maintaining single‐phase wurtzite structure and boron
content over 10% has been challenging. In this study, we report on the growth of 100 nm …