Properties of undoped ZnO and Mg doped ZnO thin films by sol-gel method for optoelectronic applications
NH Hashim, S Subramani, M Devarajan… - Journal of the Australian …, 2017 - Springer
Magnesium-doped zinc oxide (MgZO) is one of the potential optical materials in
enhancement of the band gap in solid state lighting. Undoped and Mg-doped ZnO thin film …
enhancement of the band gap in solid state lighting. Undoped and Mg-doped ZnO thin film …
Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures
DF Liu - Journal of Computational Electronics, 2023 - Springer
In this work, electron transport in Mg x Zn1− x O/ZnO heterostructures at room temperature is
simulated by the ensemble Monte Carlo (EMC) method. Electron scattering mechanisms …
simulated by the ensemble Monte Carlo (EMC) method. Electron scattering mechanisms …
Dielectric anomaly in Mg doped ZnO thin film deposited by Sol–Gel method
Magnesium doped ZnO polycrystalline thin film was deposited on p-type Si by sol–gel
method, and the same was annealed at in oxygen rich environment. The magnesium doping …
method, and the same was annealed at in oxygen rich environment. The magnesium doping …
Dislocation scattering in ZnMgO/ZnO heterostructures
L Sang, SY Yang, GP Liu, GJ Zhao… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was
studied. It was found that dislocation scattering was dominant in the low-electron …
studied. It was found that dislocation scattering was dominant in the low-electron …
Post annealing effect on structural and optical properties of ZnO thin films derived by sol–gel route
Zinc oxide thin films have been spun coated on p-Si (100) substrates by sol–gel route.
These films were annealed at different annealing temperatures from 300 to 1,000° C in the …
These films were annealed at different annealing temperatures from 300 to 1,000° C in the …
N-doped MgZnO alloy thin film prepared by sol–gel method
K Chongsri, S Boonruang, W Techitdheera… - Materials Letters, 2011 - Elsevier
In this work, nitrogen-doped MgZnO thin films were deposited on glass substrate by spin-
coating technique and thermal annealing treatment. The X-ray diffraction (XRD), scanning …
coating technique and thermal annealing treatment. The X-ray diffraction (XRD), scanning …
The Effect of Dislocation and Interface‐Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure
DF Liu - Advances in Materials Science and Engineering, 2022 - Wiley Online Library
In this work, the electron mobility in the MgZnO/ZnO heterostructure at room temperature is
theoretically studied by considering interface roughness (IFR), dislocation (DIS), and polar …
theoretically studied by considering interface roughness (IFR), dislocation (DIS), and polar …
Investigation on the ZnO: N films grown on (0 0 0 1) and (0 0 0 1) ZnO templates by plasma-assisted molecular beam epitaxy
Nitrogen-doped ZnO films (ZnO: N) were grown on (0001) and (0001¯) ZnO templates by
plasma-assisted molecular beam epitaxy (PA-MBE). High nitrogen concentration (> 5× …
plasma-assisted molecular beam epitaxy (PA-MBE). High nitrogen concentration (> 5× …
Effect of buffer layers on the structural properties of PLD-grown Mg0.5Zn0.5O films on c-sapphire
This study investigated the growth conditions required for growing single-phase hexagonal
Mg 0.5 Zn 0.5 O epitaxial thin-film layers over a variety of buffer layers, including ZnO, MgO …
Mg 0.5 Zn 0.5 O epitaxial thin-film layers over a variety of buffer layers, including ZnO, MgO …
A Study of Stacked Buffer Layers for the Epitaxial Growth of Zn0. 58Mg0. 42O Films on c-Sapphire by Pulsed Laser Deposition
We report the growth of hexagonal Zn 0.58 Mg 0.42 O thin films on a c-plane sapphire
substrate via pulsed laser deposition using Zn 0.7 Mg 0.3 O/Zn 0.9 Mg 0.1 O/ZnO stacked …
substrate via pulsed laser deposition using Zn 0.7 Mg 0.3 O/Zn 0.9 Mg 0.1 O/ZnO stacked …