Owing to their superior carrier mobility, strong light–matter interactions, and flexibility at the
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …

The recent progress in III-nitride tunnel junction (TJ) contacts for optoelectronic devices is
summarized in this review paper. Due to the rapid developments of various III-nitride based …

All-perovskite tandem solar cells pave the way for increasing the efficiency of solar cells
beyond the Shockley-Queisser limit imposed on single junction perovskite cells. While all …

We develop an optoelectronic model for a two-terminal all-perovskite tandem solar cell
comprising a top cell, a bottom cell, and a recombination junction in between that connects …

Due to the efficiency limit placed by Shockley-Queisser for the single junction solar cells,
interest has now shifted to the design and fabrication of cost-effective and more efficient …

We report on the vertical hole transport through unipolar unintentionally doped (UID) and p-
type doped AlGaN heterostructures to evaluate the effectiveness of the UID and doped …

This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting
lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach …

In this paper, we investigate the effect of a potential well between the source and channel on
the subthreshold swing and On-current of a nano-wire TFET. Here, we benefit from the …

In this paper, we studied the effect of an electromagnetic field of an ultrahigh frequency on
the I–V characteristics of tunnel diodes. The influence of thermionic current on the change in …

In this paper, a formula was derived for calculating the total current generated in a tunnel
diode under the action of a microwave field and a magnetic field. In addition, the …