This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

Abstract Metal-oxide-semiconductor (MOS) devices are affected by generation,
transformation, and charging of oxide and interface defects. Despite 50 years of research …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the
hysteresis in their transfer characteristics, which is typically associated with charge trapping …

An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …

We review the state-of-the-art in the understanding of planar NAND Flash memory reliability
and discuss how the recent move to three-dimensional (3D) devices has affected this field …

In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …

Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor
field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic …

Bias temperature instability (BTI) is a well-investigated degradation mechanism in
technologies based on silicon, gallium nitride, or silicon carbide (SiC). Essentially, it leads to …