Since Moore's law driven scaling of planar MOSFETs faces formidable challenges in the
nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to …

Peer-to-peer (P2P) computing has emerged as a significant paradigm for providing
distributed services, in particular search and data sharing. Current P2P networks (eg …

This paper proposes a new design of a highly stable and low-power static RAM (SRAM) cell
using carbon nanotube FETs (CNTFETs) that utilizes different threshold voltages for best …

In this paper, issues related to the physical design and layout density of FinFET standard
cells are discussed. Analysis significantly extends previous analyses, which considered the …

A new FinFET memory circuit technique based on asymmetrically gate underlap engineered
bitline access transistors is proposed in this paper. The strengths of the asymmetrical bitline …

As CMOS devices scales to the nano ranges, increased short channel effects and process
variations considerably affect device and circuit designs. Novel devices are been proposed …

We propose a reliable high-yield nine-carbon-nanotube field-effect transistor (9-CNTFET)
static random-access memory (SRAM) cell using shared bit line and half-select-free …

In this work, design and simulation of FinFET and CMOS based Astable Multivibrator (AMV)
have been performed. Performance of proposed circuit was compared by varying resistance …

Many researchers are working to improve the write operation in SRAM bit-cell for better write
stability, low power dissipation, and minimal access time during the write process. However …

This paper proposes a new high speed ternary full adder (TFA) cell for carbon nano tube
field effect transistor (CNTFET) technology. The proposed design has a symmetric pull-up …